Santa Clara, CA and Kyoto, Japan, July 12, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced its fourth generation 650V fast recovery diodes (FRDs), the RFL/RFS Series, featuring low forward ...

A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Robust systems often have several different power sources, and switches are implemented to separate the power supplies from each other to avoid damage. In most cases, multiple diodes are placed in the ...

The previous column in this series discussed driver and layout considerations to improve the performance achievable with eGaN FETs. In this installment the optimum layout will be implemented in a high ...